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RB706F-40T106 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode | |||
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Diodes
Shottky barrier diode
RB706F-40
RB706F-40
zApplication
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zStructure
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
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zTaping dimensions (Unit : mm)
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zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
45
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60HzÌ 1cyc) IFSM
200
mA
Junction temperature
Tj
125
ã·
Storage temperature
Tstg
-40 to +125
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zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
0.26 0.37
Reverse current
IR
-
0.05 1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA
VR=10V
pF
VR=1V , f=1MHz
Rev.A
1/3
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