RB706F-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Shottky barrier diode
RB706F-40
RB706F-40
zApplication
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zStructure
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Ea_同ch_寸le_法ad has same dimension
(3)
0.15±0.05
(2)
(1)
0～0.1
（0.65） （0.65）
1.3±0.1
0.7±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
zLead size figure (Unit : mm)
1.3
0.65
0.8MIN
UMD3
zStructure
0.3±0.1
2.25±0.1
　　　　 0
4.0±0.1
φ0.5±0.05
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
45
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hz・1cyc) I_FSM
200
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
0.26 0.37
Reverse current
I_R
-
0.05 1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
I_F=1mA
µA
V_R=10V
pF
V_R=1V , f=1MHz
Rev.A
1/3