RB706D-40T146 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB706D-40
Datasheet
lApplication
Low current rectification
lFeatures
1) Small mold type. (SMD3)
2) Low I_R
3) High reliability.
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
2.9±0.2
各リードとも
0.4_{　＋－00..105} ^{Each同le寸a法d has same dimension}
(3)
＋0.1
0.15－0.06
lLand size figure (Unit : mm)
1.9
0.95
(2)
(1)
0.95
0.95
1.9±0.2
0～0.1
0.8±0.1
1₁._.1₁±⁺_-0₀₀._.^..212₀₁
SMD3
0.8MIN.
lStructure ^{Cathode, Anode}
ROHM : SMD3
JEITA : SC-59
JEDEC :SOT-346
week code
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.5±0.1
　　　^f1　^.　^50.1
Anode Cathode
0.3±0.1
3.2±0.1
4.0±0.1
φ^f1.0⁰5⁵M^MIN^IN
1.35±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
45
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward voltage (*1)
Io
30
mA
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
(*1) Rating of per diode : lo/2
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
- 0.37
Reverse current
I_R1
-
-
1
Capacitance between terminals
Ct1
- 2.0
-
Unit
Conditions
V I_F=1mA
mA ^V_R^=10V
pF V_R=1V , f=1MHz
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2013.04 - Rev.D