RB706D-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB706D-40
RB706D-40
zApplications
Low current rectification
zFeatures
1) Small mold type. (SMD3)
2) Low I_R
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.9±0.2
各リードとも
0.4 ^＋0.1 Eac^同h l^寸ea^法d has same dimension
　－0.05
(3)
＋0.1
0.15－0.06
(2)
(1)
0.95
0.95
1.9±0.2
0～0.1
0.8±0.1
1.1±0.2
0.01
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
z Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
z Land size figure (Unit : mm)
1.9
0.95
0.8MIN.
z Structure
0.3±0.1
3.2±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak （60Hz・1cyc） (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode : Io/2
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
4.0±0.1
Limits
45
40
30
200
125
-40 to +125
φ1.05MIN
Unit
V
V
mA
mA
℃
℃
1.35±0.1
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
- 0.37
I_R1
-
-
1
Ct1
-
2.0
-
Unit
Conditions
V
I_F=1mA
µA
V_R=10V
pF
V_R=1V , f=1MHz
Rev.B
1/3