RB578VAM100 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB578VAM100
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.1
lFeatures
1) Small power type (TUMD2M)
1.4±0.1
0.8±0.05
(1)
0.17
+0.10
-0.05
1.0±0.10
0.60
+0.20
-0.10
2) Super low I_R
TUMD2M
3) High reliability
(2)
0～0.1
lStructure
Cathode
lConstruction
Silicon epitaxial planar
ROHM : TUMD2M
Manufacture Date
lTaping specifications (Unit : mm)
4. 0 ±0 .1 2 . 0 ±0. 0 5 _φφ_{1 .}^f1¹₅.5^.₅⁵±^_±⁰⁰₀₀^..₀¹¹_{. 0 5}
Anode
0⁰.2^.5³Â±^±0⁰.0^.5¹
1₁._.44₃0_±±₀0_.0.₅1
4.0 ±0.1
φ 1φ.^f1015^±⁰⁰⁰_0.^.22
1₀._.90_±±_0.0₀₈. 1
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
100
V
Reverse voltage (DC)
V_R
100
V
Average rectified forward current
Io
0.7
A
Forward current surge peak (60Hz・1cyc) I_FSM
5
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.85
- 200
Unit
Conditions
V I_F=0.7A
nA V_R=100V
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2015.09 - Rev.C