RB558W Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB558W
RB558W
zApplications
Low current rectification
zFeatures
1) Ultra Small power mold type.
(EMD3)
2) Low V_F
3) High reliability.
z External dimensions (Unit : mm)
1.6± 0.2
0 .3 ± 0 .1
　　　 0.05
(3)
0.15±0.05
0 .2 ± 0 .1
(2)
(1)
　　-0.05
0.5 0.5
1.0± 0.1
0～0.1
0.55±0.1
0.7±0.1
z Land size figure (Unit : mm)
0.5 0.5
0.7
0.6 0.6
EMD3
zConstruction
Silicon epitaxial planar
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
zStructure
z Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
　　　　　 0
0.3±0.1
1.8±0.1
4.0±0.1
2.0±0.05
φ1.1±0.1
0.9±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1)Per chip
Symbol
V_R
Io
I_FSM
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
V_F1
-
V_F2
-
I_R
-
-
0.35
-
0.49
-
10
Limits
Unit
30
V
100
mA
500
mA
125
℃
-40 to +125
℃
Unit
Conditions
V I_F=10mA
V I_F=100mA
µA V_R=10V
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