RB558VA150 Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

RB558VA150
Data Sheet
Schottky Barrier Diode
RB558VA150
lApplications
General rectification
lFeatures
1)Small power mold type.(TUMD2)
2)High reliability
3)AEC-Q101 qualified
lConstruction
Silicon epitaxial
lExternal Dimensions(Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
lLand Size Figure(Unit : mm)
1.1
TUMD2
lStructure
0.8±0.05
ROHM : TUMD2
Manufacture Date
0.6±0.2
　　　 0.1
lTaping Dimensions(Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.1
　　　　　 0
0.25±0.05
1.43±0.05
4.0±0.1
φ 1.0±0.2
　　　　　0
0.9±0.08
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
Limits
150
150
0.5
3
150
-55 to +150
lElectrical Characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.95
I_R
-
-
0.5
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=0.5A
mA
V_R=150V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A