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RB557W_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Data Sheet
Schottky Barrier Diode
RB557W
ï¬Applications
General rectification
ï¬Features
1)Ultra small mold type. (EMD3)
2)Low VF
3)High reliability
ï¬Construction
Silicon epitaxial planar
ï¬Dimensions (Unit : mm)
1.6± 0.2
0.3±0.1
ããã 0.05
(3)
0.15±0.05
ï¬Land size figure (Unit : mm)
0.5 0.5
0.7
0 .2± 0.1
(2)
(1)
ãã- 0.05
0.5 0.5
1.0±0.1
0ï½0.1
0.6
0.55±0.1
0.7±0.1
EMD3
ï¬Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory
ï¬Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
ÏÏ1.15.55±ï«00..1
ãããããï00
0.6
0.3±0.1
1.8±0.1
Ï0.5±0.1
0.9±0.2
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
30
V
Average rectified forward current (*1)
Io
100
mA
Forward current surge peak (60Hzã»1cyc) (*1) IFSM
500
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
ï40 to ï«125
°C
(*1) Rating of per diode
ï¬Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1
-
-
0.35
VF2
-
-
0.49
IR
-
-
10
Unit
Conditions
V
IF=10mA
V
IF=100mA
μA
VR=10V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
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