RB557WFH Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
AEC-Q101 Qualified
RB557WFH
Applications
General rectification
Features
1)Ultra small mold type. (EMD3)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
1.6± 0.2
0.3±0.1
　　　 0.05
(3)
0.15±0.05
Land size figure (Unit : mm)
0.5 0.5
0.7
0 .2± 0.1
(2)
(1)
　　- 0.05
0.5 0.5
1.0±0.1
0～0.1
0.6
0.55±0.1
0.7±0.1
EMD3
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
　　　　　00
0.6
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current (*1)
Io
100
mA
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
500
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
- 0.35
V_F2
-
- 0.49
I_R
-
-
10
Unit
Conditions
V
I_F=10mA
V
I_F=100mA
μA
V_R=10V
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2011.04 - Rev.A