RB551V-30_13 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB551V-30
lApplication
High frequency rectification
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
Datasheet
lLand size figure (Unit : mm)
0.9MIN.
lFeatures
1) Small mold type. (UMD2)
2) Low V_F
3) High reliability.
lConstruction
Silicon epitaxial planar
UMD2
lStructure
0.3±0.05
0.7±0.2
　　　 0.1
ROHM : UMD2 JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ_f11_..₅5₅5±_00_.0.0₅5
Cathode
Anode
0.3±0.1
1.40±0.1
4.0±0.1
φ_f1₁._.0₀5₅
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
30
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current
Io
500
A
Forward current surge peak (60Hz・1cyc) I_FSM
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
1.0±0.1
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
- 0.36
V_F2
-
- 0.47
Reverse current
I_R
-
- 100
Unit
Conditions
V I_F=100mA
V I_F=500mA
mA ^V_R^=20V
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2013.04 - Rev.D