RB551V-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB551V-30
RB551V-30
zApplications
High frequency rectification
zFeatures
1) Small mold type. (UMD2)
2) Low VF.
3) High reliability.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
zLand size figure (Unit : mm)
0.9MIN.
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
　　　 0.1
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
UMD2
zStructure
0.3±0.1
1.40±0.1
zAbsolute maximum ratings (Ta = 25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
Forward current s urge peak (60Hz_・1cyc_）
Junction tem perature
Storage tem perature
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
zElectrical characteristics (Ta = 25°C)
Param eter
Sym bol Min.
Forward voltage
Revers e current
V_F1
-
V_F2
-
I_R
-
4.0±0.1
φ1.05
1.0±0.1
Lim its
Unit
30
V
20
V
500
mA
2
A
125
℃
-40 to +125
℃
Typ. Max.
-
0.36
-
0.47
-
100
Unit
C o n d i ti o n s
V
I_F=100m A
V
I_F=500m A
µA
V_R=20V
Rev.C
1/3