RB551SS-30 Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB551SS-30
lApplications
General Rectification
lDimensions (Unit : mm)
lFeatures
1)Small mold type (KMD2)
2)High reliability
3)Low V_F
lConstruction
Silicon epitaxial planer
0～0.03
0.8±0.05
0.6±0.03
ROHM : KMD2
JEDEC :-
JEITA : -
dot (year week factory)
0.7±0.05
lTaping dimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
0.8
KMD2
lStructure
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak) V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak(60Hzï½¥1cyc.)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Limits
30
20
0.5
5
125
-40 to +125
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
V_F1
-
VF2
-
-
0.36
-
0.47
Reverse current
IR
-
-
100
Unit
V
V
A
A
C
C
Unit
V
V
μA
Conditions
IF=100mA
I_F=500mA
VR=20V
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2011.10 - Rev.A