RB550VM-40 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB550VM-40
Data Sheet
lApplication
Small current rectification
lFeatures
1) Small mold type (UMD2)
2) High reliability
3) Low V_F
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
　　　 0.05
lLand size figure (Unit : mm)
0.9
(2)
0.3±0.05
ROHM : UMD2
JEDEC :SOD-323
JEITA : SC-90/A
0.7±0.2
　　　 0.1
: Manufacture date
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
1.5
+0.1
-0
UMD2
(1) Cathode
lStructure
(2) Anode
0.25±0.05
1.4
+0.1
-0.05
4.0±0.1
1.0
+0.2
-0
1.5 MAX
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
40
V
Reverse voltage
V_R
Direct reverse voltage
40
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
200
mA
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle
1
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=200mA
-
- 0.51 V
Reverse current
I_R1
V_R=10V
-
- 12 mA
I_R2
V_R=40V
-
- 40 mA
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2015.10 - Rev.A