RB550VA-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Data Sheet
Schottky barrier Diode
RB550VA-30
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
Land size figure (Unit : mm)
1.1
Features
1)Small mold type（TUMD2）
2)Low V_F, Low I_R
3)High reliability
Construction
Silicon epitaxial planar
TUMD2
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
0.25±0.05
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz・1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
Limits
Unit
30
V
30
V
1
A
3
A
150
°C
40 to 150
°C
0.9±0.08
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
0.45 0.49
V_F2
-
0.48 0.52
Reverse current
I_R
-
1
30
Unit
Conditions
V
I_F=700mA
V
I_F=1A
μA
V_R=10V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.D