RB550EA_15 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB550EA
Applications
Low current rectification
Features
1)Small mold type.（TSMD5）
2)Low V_F, Low I_R
3)High reliability
Construction
Silicon Epitaxial Planer
Dimensions (Unit : mm)
2. 9± 0.1
0.4_{　＋－00..105} 各_Eaリ_cー_h ド_leと _adも_h同_a寸 _{s s}法_{ame dimension}
(5)
(4)
0. 16± 0 .1
0.06
Land size figure (Unit : mm)
0.8MIN.
0.45 0.35 0.35 ^0.45
0.6
(1)
(2)
(3)
0.95
0.95
1. 9± 0.2
0～ 0.1
0.33±0.03
0.7±0.1
0.85±0.1
1.0Max
0.95 0.95
TSMD5
1.9
Structure
ROHM : TSMD5
dot(year week factory) + day
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5 5±0.05
0.3±0.1
3.2±0.08
4 .0 ±0 .1
φ1.1±0 .1
1.1 ±0 .08
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (DC)
V_R
Average rectified forwarfd current (*1)
Io
Forward current surge peak (t=1msec)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Rating of per diode.
Limits
30
0.7
12
150
40 to 150
Electrical characteristics (Ta=25°C, Rating of per diode.)
Parameter
Symbol Min.
Forward voltage
V_F1
0.39
Reverse current
IR1
-
IR2
ESD break down voltage
ESD
15
Typ. Max.
0.45 0.49
1 30.00
5.0 50
-
-
Unit
V
A
A
°C
°C
Unit
Conditions
V
I_F=0.7A
μA
V_R=10V
μA
V_R=30V
KV
C=100_PF,R=1.5KΩ
Forward and reverse : 1 times
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2011.05 - Rev.A