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RB550EA_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB550EA
ï¬Applications
Low current rectification
ï¬Features
1)Small mold type.ï¼TSMD5ï¼
2)Low VF, Low IR
3)High reliability
ï¬Construction
Silicon Epitaxial Planer
ï¬Dimensions (Unit : mm)
2. 9± 0.1
0.4ãï¼ï¼00..105 åEaãªcã¼h ãle㨠adãhåa寸 s sæ³ame dimension
(5)
(4)
0. 16± 0 .1
0.06
ï¬Land size figure (Unit : mm)
0.8MIN.
0.45 0.350.60.35 0.45
(1)
(2)
(3)
0.95
0.95
1. 9± 0.2
0ï½ 0.1
0.33±0.03
0.7±0.1
0.85±0.1
1.0Max
0.95 0.95
TSMD5
1.9
ï¬Structure
ROHM : TSMD5
dot(year week factory) + day
ï¬Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
Ï1.5 5±0.05
0.3±0.1
3.2±0.08
4 .0 ±0 .1
Ï1.1±0 .1
1.1 ±0 .08
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (DC)
VR
Average rectified forwarfd current (*1)
Io
Forward current surge peak (t=1msec)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Rating of per diode.
Limits
30
0.7
12
150
ï40 to ï«150
ï¬Electrical characteristics (Ta=25°C, Rating of per diode.)
Parameter
Symbol Min.
Forward voltage
VF1
0.39
Reverse current
IR1
-
IR2
ESD break down voltage
ESD
15
Typ. Max.
0.45 0.49
1 30.00
5.0
50
-
-
Unit
V
A
A
°C
°C
Unit
Conditions
V
IF=0.7A
μA
VR=10V
μA
VR=30V
KV
C=100PF,R=1.5Kâ¦
Forward and reverse : 1 times
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1/3
2011.05 - Rev.A
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