RB550EA Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB550EA
RB550EA
zApplications
Low current rectification
zFeatures
1) Small mold type. (TSMD5)
2) Low V_F, low I_R.
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.9±0.1
0.4_{　＋－00..105} E各aリchーlドeaとd もha同s 寸sa法me dimension
(5)
(4)
0.16±0.1
0.06
0～0.1
(1)
(2)
(3)
0.95
0.95
1.9±0.2
0.33±0.03
0.7±0.1
0.85±0.1
1.0Max
ROHM : TSMD5
dot(year week factory) + day
z Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
z Land size figure (Unit : mm)
0.8
0.45 0.35
0.35 0.45
0.7
0.95 0.95
1.9
TSMD5
zStructure
0.3±0.1
3.2±0.08
4.0±0.1
φ1.1±0.1
1.1±0.08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current (*1)
Io
0.7
A
Forward current surge peak （t=1msec)
I_FSM
12
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1) Rating of per diode.
zElectrical characteristics (Ta=25°C, Rating of per diode.)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F1
0.39 0.45 0.49
IR1
-
1 30.00
IR2
5.0 50
ESD break down voltage ESD
15
-
-
Unit
Conditions
V
I_F=0.7A
µA
V_R=10V
µA
V_R=30V
KV
C=100_PF,R=1.5KΩ
Forwad and reverse : 1 times
1/3