RB548W Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB548W
RB548W
zApplication
Rectifying small power
zFeatures
1) Extra small mold type. (EMD3)
2) High reliability.
zConstruction
Silicon epitaxial planer
zCircuit
(1) K
(2) A
zExternal dimensions (Units : mm)
0.2
+0.1
−0.05
1.6±0.2
1.0±0.1
0.5 0.5
0.2
+0.1
−0.05
(1) (2)
0.7±0.1
0.55±0.1
0~0.1
(3)
0.3 _{−+00..015} ^0.15±0.05
ROHM : EMD3
EIAJ :
JEDEC :
(3) A, K
zAbsolute maximum ratings Ta=25°C
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
30
V
Average rectified forward current ^∗1
IO
100
mA
Forward current surge peak ^∗2
IFSM
0.5
mA
Junction temperature
Tj
125
°C
Storage temperature
∗1 Rating of per diode
∗2 60Hz, 1cyc. Rating of per diode
Tstg
−40 to +125
°C
zElectrical characteristics Ta=25°C
Parameter
Symbol Min.
Forward voltage
VF
−
Reverse current
IR
−
∗Please pay attention to static electricity when handling.
Typ. Max. Unit
Conditions
−
0.450
V
IF=10mA
−
0.5
µA VR=10V
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