RB541VM-40 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB541VM-40
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
　　　 0.05
lLand Size Figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type
(UMD2)
2) High reliability
3) Super low V_F
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.7±0.2
　　　 0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-90/A
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
fφ1.15.55±0.005.05
UMD2
lStructure ^{(1) Cathode}
(2) Anode
0.3±0.1
1.40±0.1
4.0±0.1
fφ1.10.055
1.0±0.1
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
40
V
Reverse voltage
V_R
Direct reverse voltage
40
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
200
mA
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle
1000 mA
Operating junction temperature
T_j
-
125
°C
Storage temperature
T_stg
-
-55 to +125 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
V_F
I_F=100mA
-
- 0.61 V
I_R
V_R=40V
-
- 100 mA
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2015.01 - Rev.A