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RB540VM-30 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RB540VM-30
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
    0.05
lLand Size Figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type
(UMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-90/A
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
fφ1.15.55±0.005.05
UMD2
lStructure (1) Cathode
(2) Anode
0.3±0.1
1.40±0.1
4.0±0.1
fφ1.10.055
1.0±0.1
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30
V
Reverse voltage
VR
Direct reverse voltage
30
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
200
mA
Non-repetitive forward current surge peak IFSM
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
1000 mA
Operating junction temperature
Tj
-
150
°C
Storage temperature
Tstg
-
-55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF
IF=10mA
-
- 0.45 V
IR
VR=10V
-
- 0.5 mA
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2015.01 - Rev.A