RB531XN Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB531XN
RB531XN
!Applications
Rectifying small power
!Features
1) Small mold type. (UMD6)
2) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Unit : mm)
2.0±0.2
1.3±0.1
0.65 0.65
(3) (2) (1)
(4) (5) (6)
0.2
+0.1
−0.05
ROHM : UMD6
EIAJ : SOT-363
JEDEC :
0.9±0.1
0.7
0.1Min.
0∼0.1
KKK
(3) (2) (1)
0.15±0.05
(4) (5) (6)
AAA
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
30
V
Mean rectifying current ^∗1
IO
100
mA
Peak forward surge curren ^∗2
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40 to +125
°C
∗1 Rating of per diode.
∗2 60Hz for 1
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF1
−
−
0.300
V
IF=10mA
VF2
−
−
0.430
V
IF=100mA
Reverse current
IR
−
−
20
µA VR=10V
Note) Please pay attention to static electricity when handling.
Conditions
1/2