RB531S-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB531S-30
Applications
General rectification
Dimensions(Unit : mm)
0.8±0.05
0.12±0.05
Land size figure(Unit : mm)
0.8
Features
1)Ultra small mold type.(EMD2)
2)Low V_F
3)High reliability
Construction
Silicon epitaxial planer
N
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
EMD2
Structure
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05
φ1.55±0.05
0.2±0.05
0⁰.9^.90⁵±^±0.0⁰5^.06
0
E空mポptケy pッoトcket ^4.0±0.1
2.0±0.05
φ0.5
0.2
00.7.756±±0.005.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage(DC)
V_R
Average rectified forward current
Io
Forward current surge peak(60Hz/1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Limits
30
100
500
125
-40to+125
Electical voltage(Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.35
I_R
-
-
10
Unit
V
mA
mA
C
C
Unit
Conditions
V
I_F=10mA
μA
V_R=10V
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2011.03 - Rev.B