RB531ES-30 Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB531ES-30
Application
General rectification
Dimensions (Unit : mm)
Datasheet
Land Size Figure (Unit : mm)
0.31
Features
1) Small silicon package
(SMD0603)
2) High Accuracy Manufacturing
Dimension tolerance10m
0～0.030
0.280±0.010
3) Low V_F
DSN0603-2(SMD0603)
0.260±0.010
0.300±0.010
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
SMD0603
Structure
Cathode
Anode
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
30
V
Reverse voltage
V_R
Direct reverse voltage
30
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
100
mA
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, one cycle,
non-repetitive at T_a=25ºC
500
mA
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
40 to 150 °C
Electrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
V_F1
I_F=10mA
- 270 300 mV
V_F2
I_F=100mA
- 420 500 mV
I_R1
V_R=10V
-
-
7 A
I_R2
V_R=30V
-
- 50 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.12 - Rev.A