RB530CM-60 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB530CM-60
lApplication
General rectification
lDimensions (Unit : mm)
0.37±0.05
(1)
Data Sheet
lLand Size Figure (Unit : mm)
0.55
lFeatures
1) Small mold type
(VMN2M)
2) High reliability
3) Low V_F
lConstruction
Silicon epitaxial planar type
0~0.10
(2) _0.22±0.05
0.60±0.05
0.16±0.05
ROHM : VMN2M
: Manufacture year/ week/ factory
lTaping Dimensions (Unit : mm)
f1.55±0.05
4.0±0.05
2.0±0.05
VMN2M
(1) Cathode
lStructure
(2) Anode
0.2±0.05
2.0±0.05
f0.5±0.05
0.7±0.05
0.47±0.05
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
60
V
Reverse voltage
V_R
Direct reverse voltage
60
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
100
mA
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle
200
mA
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
V_F1
I_F=10mA
- 0.47 0.54 V
V_F2
I_F=15mA
- 0.52 0.60 V
I_R
V_R=60V
- 0.09 1 mA
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1/5
2015.03 - Rev.A