RB521G-30T2R Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode RB521G-30

Diodes
Schottky barrier diode
RB521G-30
RB521G-30
zApplication
Rectifying small power
zFeatures
1) Ultra small mold type. (VMD2)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
0.6±0.05
0.13±0.03
zLand size figure (Unit : mm)
0.5
0.27±0.03
0.5±0.05
ROHM : VMD2
dot (year week factory)
VMD2
zStructure
zTaping specification (Unit : mm)
4±0.1
2±0.05
φ1.5+0.1
　　　　　0
0.18±0.05
0.76±0.1
4±0.1
2±0.05
φ0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_R
Io
I_FSM
Tj
Tstg
Limits
30
100
500
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forward voltage
V_F
-
- 0.35
V
Reverse current
I_R
-
-
10
µA
Unit
V
mA
mA
℃
℃
Conditions
I_F=10mA
V_R=10V
0.3
0.65±0.05
Rev.A
1/3