RB521G-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB521G-30
RB521G-30
zApplication
Rectifying small power
zFeatures
1) Ultra small mold type. (VMD2)
2) High reliability
zConstruction
Silicon epitaxial planer
zExternal dimensions (Units : mm)
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
ROHM : VMD2
EIAJ :
JEDEC :
0.5±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
30
V
Average rectified forward current
IO
100
mA
Forward current surge peak ^∗
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
∗ 60Hz, 1cyc.
Tstg
−40~+125
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
VF
−
Reverse current
IR
−
∗ Please pay attention to static electricity when handling.
Typ.
−
−
Max.
0.350
10
Unit
V
IF=10mA
µA VR=10V
Conditions
1/2