RB520ZS-30 Datasheet, PDF (1/2 Pages) Rohm – Schottky Barrier Diode

Diode
Schottky Barrier Diode
RB520ZS-30
●Applications
General rectification
●Dimensions（Unit : mm）
RB520ZS-30
●Land size figure(Unit : mm)
0.31
●Features
1)Ultra small mold type.（GMD2）
2)Low IR
3)High reliability
●Construction
Silicon epitaxial
Ａ
0～0.03
0.3±0.05
0.3±0.03
ROHM : GMD2
dot (year week factory)
●Taping specifications（Unit : mm）
GMD2
●Structure
●Absolute maximum ratings（Ta=25℃）
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
100
mA
Forward current surge peak（60Hz・1cyc）
I_FSM
500
mA
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
●Electrical characteristics（Ta=25℃）
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.46
I_R
-
-
0.3
Unit
Conditions
V
I_F=10mA
µA
V_R=10V
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