RB520S-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB520S-40
Applications
Rectifying small power
Dimensions (Unit : mm)
0.8±0.05
0.12±0.05
Land size figure (Unit : mm)
0.8
Features
1)Ultra small mold type. (EMD2)
2)Low I_R
3)High reliability
Construction
Silicon epitaxial
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
0.6±0.1
φ1.5±0.05
φ1.55±0.05
EMD2
Structure
0.2±0.05
0⁰.9^.90⁵±^±0.0⁰5^.06
0
E空mポptケy pッoトcket ^4.0±0.1
2.0±0.05
φ0.5
0.2
00.7.756±±0.005.05
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
200
mA
Forward current surge peak
I_FSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
0.39
V_F
-
-
0.55
Reverse current
I_R
-
-
1
I_R
-
-
10
Unit
Conditions
V
I_F=10mA
V
I_F=100mA
μA
V_R=10V
μA
V_R=40V
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2011.03 - Rev.E