RB520CS-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB520CS-30
RB520CS-30
zApplications
Low current rectification
zFeatures
1) Ultra Small power mold type.
(VMN2)
2) Low I_R
3) High reliability.
zConstruction
Silicon epitaxial planar
z Dimensions (Unit : mm)
0.6±0.05
0.16±0.05
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory) + day
z Taping specifications (Unit : mm)
4±0.1
2±0.05
φ1.55
z Land size figure (Unit : mm)
0.55
VMN2
zStructure
0.2±0.05
0.7±0.05
2±0.05
4.0±0.1
φ0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V_R
Io
I_FSM
Tj
Tstg
Limits
30
100
500
150
-40 to +150
0.52
Unit
V
mA
mA
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.45
Reverse current
I_R
-
-
0.5
Unit
Conditions
V
I_F=10mA
µA
V_R=10V
Rev.C
1/3