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RB510SM-40 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode
Schottky Barrier Diode
RB510SM-40
Data Sheet
lApplication
Small current rectification
lDimensions (Unit : mm)
0.8±0.05
(1)
0.12±0.05
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Ultra small mold type
(EMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
ROHM : EMD2
JEDEC : SOD-523
0.6±0.1
JEITA : SC-79
: Year, week and factory
EMD2
lStructure
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
(1) Cathode
(2) Anode
0.2±0.05
T2R
0.35±0.03 0.90±0.03
4.0±0.1 2.0±0.05
Φ0.5±0.05
0.2
0.75±0.05
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40
V
Reverse voltage
VR
Direct reverse voltage
40
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
100
mA
Non-repetitive forward current surge peak IFSM
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
0.5
A
Operating junction temperature
Tj
-
150
°C
Storage temperature
Tstg
-
-55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF
IF=10mA
-
- 0.48 V
IR1
VR=10V
-
- 0.4 mA
IR2
VR=40V
-
- 2.0 mA
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2015.10 - Rev.A