RB501VM-40 Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB501VM-40
Applications
Low current rectification
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
Land size figure (Unit : mm)
0.9MIN.
Features
1)Small mold type. (UMD2)
2)High reliability
Construction
Silicon epitaxial planer
UMD2
0.3±0.05
0.7±0.2
　　　 0.1
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak (60Hz・1cyc)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
Limits
45
40
100
1
125
- 40 to +125
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
V_F1
-
V_F2
-
I_R
-
-
0.55
-
0.34
-
30
Capacitance between terminals
Ct
-
6.0
-
Unit
V
V
mA
A
°C
°C
Unit
Conditions
V
I_F=100mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A