RB501V-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB501V-40
Applications
Low current rectification
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
Land size figure (Unit : mm)
0.9MIN.
Features
1) Ultra Small mold type. (UMD2)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
　　　 0.1
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
UMD2
Structure
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
45
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
100
mA
Forward current surge peak (60Hz・1cyc)
I_FSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
Electrical characteristics (Ta=25°C)
Parameter
Forawrd voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
-
0.55
V_F2
-
-
0.34
I_R
-
-
30
Ct
-
6.0
-
Unit
Conditions
V
I_F=100mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
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2011.05 - Rev.B