RB501V-40_1 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RB501V-40
zApplication
Low current rectification
zFeatures
1) Ultra Small mold type. (UMD2)
2) Low IR
3) High reliability.
zExternal dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
zCondtruction
Silicon epitaxial planer
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
　　　 0.1
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
RB501V-40
zLead size figure (Unit : mm)
0.9MIN.
UMD2
zStructure
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
V_RM
45
V
V_R
40
V
Io
100
mA
Forward current surge peak (60Hz・1cyc)
I_FSM
1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
1.0±0.1
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
- 0.55
V_F2
-
- 0.34
Reverse current
I_R
-
-
30
Capacitance between terminals
Ct
-
6.0
-
Unit
Conditions
V
I_F=100mA
V
I_F=10mA
µA
V_R=10V
pF
V_R=10V , f=1MHz
Rev.B
1/3