RB501V-40 Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB501V-40
RB501V-40
!Applications
Low current rectification
!Features
1) Small surface mounting type. (UMD2)
2) Low VF. (VF=0.43V Typ. at 100mA)
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE MARK
CATHODE MARK
4
0.3±0.05
0.1 ^{+−00..105}
1.25±0.1
0.7 _{−+00..12}
4
0.3±0.05
0.1 ^{+−00..105}
1.25±0.1
0.7 _{−+00..12}
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
∗There are two different markings.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
45
V
DC reverse voltage
VR
40
V
Mean rectifying current
IO
0.1
A
Peak forward surge current^∗
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40~+125
°C
∗ 60 Hz for 1
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF1
Forward voltage
VF2
Reverse current
IR
Capacitance between terminals CT
−
−
0.55
V
IF=100mA
−
−
0.34
V
IF=10mA
−
−
30
µA VR=10V
−
6.0
−
pF VR=10V, f=1MHz
Note) ESD sensitive product handling required.