RB496EA_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB496EA
RB496EA
zApplications
Low current rectification
zFeatures
1) Small mold type (TSMD5)
2) Low IR
3) High reliability
zStructure
Silicon epitaxial planer
zDimensions (Unit : mm)
r
_ޓ^{㧗㧙} ฦ࡝Ea࡯ch࠼leߣad߽haหs sኸamᴺe dimension


r

㨪





r
r
r
r
/CZ
㪩㪦㪟㪤㩷㪑㩷㪫㪪㪤㪛㪌
㪻㫆 㫋㩷㩿㫐㪼 㪸㫉㩷㫎㪼 㪼 㫂㩷㪽㪸㪺 㫋㫆 㫉㫐㪀㩷㪂 㩷㪻㪸㫐
zTaping dimensions (Unit : mm)
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌
zLand size figure (Unit : mm)
㪇㪅㪏
㪇㪅㪋㪌 㪇㪅㪊㪌 _{㪇㪅㪎} ^{㪇㪅㪊㪌 㪇㪅㪋㪌}
㪇㪅㪐㪌 㪇㪅㪐㪌
㪈㪅㪐
㪫㪪㪤㪛㪌
zStructure
㪇㪅㪊㫧㪇㪅㪈
㪊㪅㪉㫧㪇㪅㪇㪏
㪋㪅㪇㫧㪇㪅㪈
㱢㪈㪅㪈㫧㪇㪅㪈
㪈㪅㪈㫧㪇㪅㪇㪏
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Reverse voltage
V_R
20
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak (60HzÌ 1cyc) (*1) I_FSM
10
A
Junction temperature
Tj
125
㷄
Storage temperature
Tstg
-40 to +125
㷄
(*1) Rating of per diode
zElectrical characteristic (Ta=25qC)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F1
-
V_F2
-
I_R
-
Typ.
-
-
-
Max.
0.35
0.40
500
Unit
Conditions
V I_F=0.5A
V I_F=1A
μA V_R=10V
Rev.B
1/3