RB481K Datasheet, PDF (1/2 Pages) Rohm – Schottky Barrier Diode

Diodes
Schottky Barrier Diode
RB481K
RB481K
!Applications
Low current rectification
!Features
1) Compact size.
2) High reliability.
3) Extremely low forward voltage.
4) This is a composite component and is ideal for
reducing the number of components used.
!Construction
Silicon epitaxial planar
!External dimensions (Units: mm)
1.25±0.1
0.6 0.65
0.3±0.1 0.2±0.1
(1) (4)
0.9±0.1
0.7
(2) (3)
0.2±0.1 0.2±0.1
0.65 0.65
1.25±0.1
2.0±0.2
0~0.1
0.15±0.05
(1) (4)
ROHM : UMD4
EIAJ : SC - 82
(2) (3)
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
30
V
DC reverse voltage
VR
30
V
Mean rectifying current
IO
0.2
A
Peak forward surge current^∗
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40~+125
°C
∗ 60 Hz for 1
!Electrical characteristics (Ta=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
VF3
VF4
IR
Min.
−
−
−
−
−
Typ.
0.18
0.25
0.34
0.40
3.6
Max.
0.28
0.33
0.43
0.50
30
Unit
Conditions
V
IF=1mA
V
IF=10mA
V
IF=100mA
V
IF=200mA
µA VR=10V