RB451F_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB451F
Applications
Low current rectification
Features
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
2. 0±0. 2
0 .3± 0.1
各_Eリ_a同cー_{h寸ドle法a}と_{d h}も_{as same dimensions}
(3)
0 .15± 0.05
(2)
(1 )
（0.65） （0.65）
1.3 ±0. 1
0 ～0. 1
0 .7± 0.1
0 .9± 0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0 ±0.0 5
φ 1.55 ±0.0 5
Data Sheet
Land size figure (Unit : mm)
1.3
0.65
0.8MIN
UMD3
Structure
0.3±0.1
2.2 5±0.1
　　　　 0
4 .0±0 .1
φ0.5 ±0.0 5
1.25±0 .1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
V_RM
40
V
V_R
40
V
Io
100
mA
Forward current surge peak (60Hz・1cyc)
I_FSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
-
0.55
V_F2
-
-
0.34
I_R
-
-
30
Ct
-
6.0
-
Unit
Conditions
V
I_F=100mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
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2011.04 - Rev.B