RB450UM Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB450UM
Data Sheet
lApplication
Small current rectification
lFeatures
1) Ultra small mold type
(UMD3F)
2) High reliability
3) Low V_F
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
2.0±0.1
0.32
+0.1
-0.05
Each leads has
same dimensions
0.9±0.1
lLand Size Figure (Unit : mm)
1.3
(3)
3F
0~0.1
(1)
(2)
0.65
0.65
1.3±0.1
ROHM : UMD3F
JEDEC : SOT-323FL
JEITA : SC-85
: Year, week and factory
0.13±0.05
0.65
UMD3F
0.8MIN
lStructure
(3)
(1) Anode
(2) NC
(3) Cathode
(1)
(2)
lTaping Dimensions (Unit : mm)
TL
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
45
V
Reverse voltage
V_R
Direct reverse voltage
40
V
Average forward rectified current
I_O
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
100
mA
Non-repetitive forward surge current I_FSM
60Hz half sin wave,
non-repetitive at T_a=25ºC, 1cycle
1
A
Operating Junction Temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F1
I_F=10mA
-
- 0.39 V
V_F2
I_F=100mA
-
- 0.55 V
Reverse current
I_R1
V_R=10V
-
-
1 mA
I_R2
V_R=40V
-
- 10 mA
Capacitance between terminals
C_t
f=1MHz, V_R=10V
- 6.0 - pF
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2016.07 - Rev.A