RB450FT106 Datasheet, PDF (1/6 Pages) Rohm – Low power rectification

Schottky Barrier Diode
RB450F
Datasheet
lApplication
Low power rectification
lFeatures
1) Small mold type. (UMD3)
2) Low I_R
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
2.0±0.2
0.3±0.1
各_Eリ_a同cー_{h寸ドle法a}と_dも_{has same dimension 0.15±0.05}
(3)
lLand size figure (Unit : mm)
1.3
0.65
(2)
(1)
（0.65） （0.65）
1.3±0.1
0～0.1
0.7±0.1
0.9±0.1
UMD3 0.8MIN.
lStructure
Cathode
ROHM : UMD3
JEDEC :SOT-323
JEITA : SC-70
dot (year week factory)
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φf11..5555±00..0055
Anode OPEN
0.3±0.1
2.25±0.1
　　　　 0
4.0±0.1
φf00..55±00.0.055
1.25±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
Reverse voltage (DC)
V_RM
45
V
V_R
40
V
Average rectified forward current
Io
100
mA
Forward current surge peak (60Hz・1cyc) I_FSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.45
Reverse current
I_R
-
-
1
Capacitance between terminals
Ct
- 6.0 -
Unit
Conditions
V I_F=10mA
mA ^V_R^=10V
pF V_R=10V, f=1MHz
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2013.04 - Rev.E