RB450F Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB450F
RB450F
!Applications
Low current rectification
!Features
1) Small surface mounting type. (UMD3)
2) Low IR. (IR=80nA Typ.)
3) High reliability.
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions (Units : mm)
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.3
0.6
0~0.1
0.3±0.1
0.15±0.05
(All leads have the same dimensions)
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
45
V
DC reverse voltage
VR
40
V
Mean rectifying current
IO
0.1
A
Peak forward surge current ^∗
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
∗60Hz for 1
Tstg
−40~+125
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Forward voltage
VF
−
Reverse current
IR
−
Capacitance between terminals CT
−
Typ.
−
−
6.0
Max.
0.45
1
−
Unit
Conditions
V
IF=10mA
µA VR=10V
pF VR=10V, f=1MHz
Note) ESD sensitive product handling required.