 English |
|
|
|
|
|
|
|
| RB425D_1 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode | |||
| |||
|
Diodes
Shottky barrier diode
RB425D
RB425D
zApplication
Low current rectification
zFeatures
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
zStructure
Silicon epitaxial planar
zDimensions (Unit : mm)
r
ฦà¡à¡¯à ¼ß£ß½
㧠Eachหleá¸adá´ºhas same dimension
Þã§
ã§
ã§
zLead size figure (Unit : mm)
ãªãª
ãª
ãªãª
ãªãª
r
㨪
r
r
㪩 㪦 ãªãª¤ã©·ãªã©·ãªª 㪤ãªãª
㪡ãªãªãªãªã©·ãªãªª 㪠㪫㪠㪠㪠ãª
㪡ãªãª 㪫㪠㩷ãªã©·ãªª ãªãª 㪠ãª
ã«ãª¼ 㪼 ã«ã©·ãªº 㫠㪻㪼
zTaping dimensions (Unit : mm)
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãªãª
ã±¢ãªãª
ãªã«§ãªãª
ãª
äääääã©·ã©·ãª
ãªãª
ãªãª¤ãª 㪥ãª
㪪㪤ãªãª
zStructure ã©·
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãª
zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward currentÍ*1Í
Forward current surge peak ä¨60Hzä¶1cycä©ä¨*1ä©
Junction temperature
Storage temperature
(*1)Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ.
Forward voltage
VF1
-
-
VF2
-
-
Reverse current
IR1
-
-
Capacitance between terminals
Ct1
-
6
ã±¢ãªãª
ãªãªãª¤ãª 㪥
ãªãª
ãªãªã«§ãªãª
ãª
Limits
Unit
40
V
40
V
100
mA
1
A
125
ã·
-40 to +125
ã·
Max.
0.55
0.34
30
-
Unit
Conditions
V IF=100mA
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
Rev.B
1/3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese