RB411VA-50TR Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB411VA-50
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
Land size figure (Unit : mm)
1.1
Features
1) Small mold type. (TUMD2)
2) High reliability.
Construction
Silicon epitaxial planar
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
TUMD2
Structure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
50
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current
Io
0.5
A
Forward current surge peak (60Hz・1cyc)
I_FSM
3
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
0.9±0.08
Electrical characteristics (Ta=25°C)
Parameter
Forawrd voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F1
-
- 0.50
V_F2
-
- 0.30
I_R
-
-
30
Ct
-
20
-
Unit
Conditions
V
I_F=500mA
V
I_F=10mA
μA
V_R=10V
pF
V_R=10V , f=1MHz
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.03 - Rev.C