RB411VA-50 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB411VA-50
RB411VA-50
zApplications
General rectification
zFeatures
1) Small mold type. (TUMD2)
2) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
z Land size figure (Unit : mm)
1.1
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
TUMD2
zStructure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Limits
50
20
0.5
3
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forawrd voltage
V_F1
-
- 0.50
V
V_F2
-
- 0.30
V
Reverse current
I_R
-
-
30
µA
Capacitance between terminals
Ct
-
20
-
pF
0.9±0.08
Unit
V
V
A
A
℃
℃
Conditions
I_F=500mA
I_F=10mA
V_R=10V
V_R=10V , f=1MHz
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