RB400VA-50 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB400VA-50
RB400VA-50
zApplications
General rectification
zFeatures
1) Small mold type. (TUMD2)
2) Low I_F, Low I_R.
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
CATHODE　MARK
1 .3 ± 0 .0 5
0 .1 7 ± 0 .1
　 　 　 　 0 .0 5
z Land size figure (Unit : mm)
1.1
0～0.1
0 .8 ± 0 .0 5
1 .3 ± 0 .1
0 .6 ± 0 .1
　 　 　 0 .0 5
0.04
0 .0 3
ROHM : TUMD2
dot (year w eek factory)+day
TUMD2
zStructure
250
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0.05
0.25±0.05
1.43±0.05
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
Lim its
50
40
0.5
3
125
-40 to +125
φ1.0±0.2
　　　　　0
Unit
V
V
A
A
℃
℃
0.9±0.08
zElectrical characteristics (Ta=25°C)
Param eter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminal
V_F1
-
-
0.55
I_R1
-
-
30
I_R2
-
-
50
Ct1
-
125
-
Ct2
-
20
-
Unit
Conditions
V
I_F=500m A
µA
V_R=10V
µA
V_R=30V
pF
V_R=0V , f=1MHz
pF
V_R=10V , f=1MHz
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