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RB400DT146 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Data Sheet
Schottky Barrier Diode
RB400D
ï¬Applications
Low current rectification
ï¬Dimensions (Unit : mm)
ï¬Land size figure (Unit : mm)
1.9
ï¬Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
ï¬Construction
Silicon epitaxial planer
2.9±0.2
åãªã¼ãã¨ã
0.4ãï¼ï¼00..105 Eacåh 寸leaæ³d has same dimension
(3)
ï¼0.1
0. 15 ï¼0 .06
0.95
(2)
(1)
0.95
0.95
1.9±0.2
0.8MIN.
0ï½0.1
SMD3
0 .8 ±0 .1
1. 1± 0. 2
0. 01
ï ï ï¬ Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
ï¬Taping specifications (Unit : mm)
4.0±0 .1
2.0±0.05
Ï1 .5± 0.1
ããããã 0
0.3±0.1
3 .2±0 .1
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
4.0±0.1
Ï1.05MIN
Limits
Unit
40
V
40
V
500
mA
3
A
125
°C
ï40 to ï«125
°C
1.35±0.1
ï¬Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF
-
- 0.55
IR1
-
-
30
IR2
-
-
50
Ct1
-
125
-
Ct2
-
20
-
Unit
Conditions
V
IF=500mA
μA
VR=10V
μA
VR=30V
pF
VR=0V , f=1MHz
pF
VR=10V , f=1MHz
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1/3
2011.04 - Rev.B
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