RB238T150FH Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB238T150FH
Application
Switching power supply
Dimensions (Unit : mm)
4.5±^00..31
Datasheet
AEC-Q101 Qualified
Structure
Features
1) Cathode common type
2) High reliability
3) Super low I_R
10.0±
0.3
0.1
3.2±0.2
1
1.2
2.8±^00..21
(1)
(2)
(3)
Anode Cathode Anode
Construction
Silicon epitaxial planar type
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±_00..015
ROHM : TO220FN
1 : Manufacture Date
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
150
V
Reverse voltage
V_R
Direct reverse voltage
150
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load,T_c=85ºC Max., I_O/2 per diode
40
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, Non-repetitive at
T_a=25ºC, 1cycle, per diode
100
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical and Thermal Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Forward voltage
V_F
I_F=20A
Reverse current
I_R
V_R=150V
Thermal resistance
R_th(j-c)
Junction to case
Min. Typ. Max. Unit
-
- 0.87 V
-
- 30 A
-
-
2 °C / W
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2015.08 - Rev.A