RB228T100 Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB228T100
Applications
Switching power supply
Features
1)Cathode common type.
2)Low I_R
3)High reliability
Dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
Construction
Silicon epitaxial planer
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① ^{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
Structure
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
110
V
Reverse voltage (DC)
V_R
100
V
Average rectified forward current (*1)
Io
30
A
Forward current surge peak (60Hz・1cyc) (*2)
I_FSM
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1) Business frequence sin wave, Tc=83°C max. Rating of per diode : lo/2
(*2) per diode
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Thermal impedance
θjc
-
Typ.
Max.
-
0.87
-
0.15
-
2.00
Unit
V
mA
°C/W
Conditions
I_F=5A
V_R=100V
junction to case
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2011.12 - Rev.A