RB228NS100_15 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB228NS100
Datasheet
Application
Switching power supply
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Features
1) Cathode common dual type
2) Low I_R
3) High reliability
RB228
NS100
1
Construction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
Taping specifications (Unit : mm)
LPDS
Structure
Cathode
Anode Anode
Absolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
110
V
Reverse voltage (DC)
V_R
100
V
Average rectified forward current (*1)
Io
30
A
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
100
A
Junction temperature
Tj
150
°C
Storage temperature
(*1) Rating of per diode : Io/2
Tstg
40 to 150
°C
Electrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min.
V_F
-
I_R
-
θjc
-
Typ. Max.
- 0.87
-
5
- _2.00
Unit
V
μA
°C/W
Conditions
I_F=5A
V_R=100V
junction to case
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2015.12 - Rev.D