RB225T-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB225T-40
Applications
Switching power supply
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
Dimensions(Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
Construction
Silicon epitaxial planer
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : ï¼´O220FN
① Manufacture Date
2.6±0.5
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current(*1)
Io
30
A
Forward current surge peak （60Hz・1cyc）(*1) I_FSM
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1)Tc=105Cmax Per chip:Io/2
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
( ) : tentative
Symbol Min. Typ. Max.
Unit
Conditions
V_F
-
-
0.63
V
I_F=15A
I_R
-
-
500
μA
V_R=40V
θjc
-
- (1.75) C/W junction to case
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2011.04 - Rev.A