RB225NS-40TL Datasheet, PDF (1/6 Pages) Rohm – General rectification

Schottky Barrier Diode
RB225NS-40
Datasheet
lApplication
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1) Cathode common dual type.
(LPDS)
2) Low I_R
RB225
NS40
1
lConstruction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
lTaping specifications (Unit : mm)
LPDS
lStructure
Cathode
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current (*1)
Io
30
A
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
100
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Thermal resistance
Symbol Min.
V_F
-
I_R
-
Rth(j-c) -
Typ. Max.
0.53 0.63
0.08 0.5
- 2.00
Unit
V
mA
°C/W
Conditions
I_F=15A
V_R=40V
junction to case
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2013.06 - Rev.B